Wayne Y W Hsueh

Title: Wayne Y W Hsueh: Innovator in Semiconductor Technology

Introduction

Wayne Y W Hsueh is a prominent inventor based in San Jose, California, known for his significant contributions to semiconductor technology. With a total of 13 patents to his name, Hsueh has made a lasting impact in the field of integrated circuits and power diodes.

Latest Patents

One of Hsueh's latest patents involves an integrated circuit that includes a power diode. This innovative method of fabricating a semiconductor integrated circuit begins with providing a semiconductor substrate of first conductivity type. In this process, an integrated circuit, such as a CMOS transistor circuit, is fabricated in a first region of the substrate, while a power diode is created in a second region. Dielectric material is formed between these regions, ensuring electrical isolation between the integrated circuit and the power diode. The power diode can consist of multiple MOS source/drain elements and associated gate elements, all connected by one electrode of the diode. Additionally, a semiconductor layer in the second region can function as another source/drain of the power diode.

Career Highlights

Hsueh has worked with notable companies in the semiconductor industry, including Apd Semiconductor, Inc. and Advanced Power Devices, Inc. His experience in these organizations has contributed to his expertise and innovative capabilities in the field.

Collaborations

Throughout his career, Hsueh has collaborated with talented individuals such as Paul C Chang and Vladimir Rodov. These partnerships have likely fostered a creative environment that has led to the development of groundbreaking technologies.

Conclusion

Wayne Y W Hsueh is a distinguished inventor whose work in semiconductor technology continues to influence the industry. His innovative patents and collaborations highlight his commitment to advancing technology and improving integrated circuit design.