The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
Jun. 22, 2007
Paul Chang, Saratoga, CA (US);
Geeng-chuan Chern, Cupertino, CA (US);
Prognyan Ghosh, Oakland, CA (US);
Wayne Y. W. Hsueh, San Jose, CA (US);
Vladimir Rodov, Seattle, WA (US);
Paul Chang, Saratoga, CA (US);
Geeng-Chuan Chern, Cupertino, CA (US);
Prognyan Ghosh, Oakland, CA (US);
Wayne Y. W. Hsueh, San Jose, CA (US);
Vladimir Rodov, Seattle, WA (US);
Diodes Inc., Westlake Village, CA (US);
Abstract
A method of fabricating a semiconductor integrated circuit including a power diode includes providing a semiconductor substrate of first conductivity type, fabricating a integrated circuit such as a CMOS transistor circuit in a first region of the substrate, and fabricating a power diode in a second region in the semiconductor substrate. Dielectric material is formed between the first region and the second regions thereby providing electrical isolation between the integrated circuit in the first region and the power diode in the second region. The power diode can comprise a plurality of MOS source/drain elements and associated gate elements all connected together by one electrode of the diode, and a semiconductor layer in the second region can function as another source/drain of the power diode.