The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2002
Filed:
Dec. 01, 2000
Paul Chang, Saratoga, CA (US);
Geeng-Chuan Chern, Cupertino, CA (US);
Wayne Y. W. Hsueh, San Jose, CA (US);
Vladimir Rodov, Redondo Beach, CA (US);
APD Semiconductor, Inc., San Jose, CA (US);
Abstract
A Schottky diode comprises a semiconductor body of one conductivity type, the semiconductor body having a grooved surface, a metal layer on the grooved surface and forming a Schottky junction with sidewalls of the grooved surface and ohmic contacts with top portions of the grooved surface. The semiconductor body preferably includes a silicon substrate with the grooved surface being on a device region defined by a guard ring of a conductivity type opposite to the conductivity type of the semiconductor body, and a plurality of doped regions at the bottom of grooves and forming P-N junctions with the semiconductor body. The P-N junctions of the doped regions form carrier depletion regions across and spaced from the grooves to increase the reverse bias breakdown voltage and reduce the reverse bias leakage current. The ohmic contacts of the metal layer increase forward current and reduce forward voltage of the Schottky diode.