Method of fabricating power rectifier device to vary operating parameters and resulting device

Abstract

A semiconductor rectifying device which emulates the characteristics of a low forward voltage drop Schottky diode and which is capable of a variety of electrical characteristics from less than 1 A to greater than 1000 A current with adjustable breakdown voltage. The manufacturing process provides for uniformity and controllability of operating parameters, high yield, and readily variable device sizes. The device includes a semiconductor body with a guard ring on one surface to define a device region in which are optionally formed a plurality of conductive plugs. Between the guard ring and the conductive plugs are a plurality of source/drain, gate and channel elements which function with the underlying substrate in forming a MOS transistor. The channel regions are defined by using the photoresist mask for the gate oxide with the photoresist mask isotropically etched to expose a peripheral portion of the gate oxide (and gate electrode) with ions thereafter implanted through the exposed gate for forming the channel region. The source/drain (e.g. source) regions can be formed by ion implantation or by out-diffusion from a doped polysilicon layer.