Company Filing History:

11 out of 5,491

Freescale Semiconductor,inc.

Years Active: 2006-2017

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12 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9847389 - Semiconductor device including an active region and two layers having different stress characteristics (2017-12-19),

2. 8569858 - Semiconductor device including an active region and two layers having different stress characteristics (2013-10-29),

3. 7714318 - Electronic device including a transistor structure having an active region adjacent to a stressor layer (2010-05-11),

4. 7538002 - Semiconductor process integrating source/drain stressors and interlevel dielectric layer stressors (2009-05-26),

5. 7420202 - Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device (2008-09-02),

6. 7271069 - Semiconductor device having a plurality of different layers and method therefor (2007-09-18),

7. 7238580 - Semiconductor fabrication process employing stress inducing source drain structures with graded impurity concentration (2007-07-03),

8. 7205202 - Semiconductor device and method for regional stress control (2007-04-17),

9. 7166897 - Method and apparatus for performance enhancement in an asymmetrical semiconductor device (2007-01-23),

10. 7161199 - Transistor structure with stress modification and capacitive reduction feature in a width direction and method thereof (2007-01-09),

11. 7064396 - Integrated circuit with multiple spacer insulating region widths (2006-06-20),

12. 7041576 - Separately strained N-channel and P-channel transistors (2006-05-09),

Title: Vance H Adams: Innovator in Semiconductor Technology

Introduction

Vance H Adams is a prominent inventor based in Austin, TX, known for his significant contributions to semiconductor technology. With a total of 12 patents to his name, Adams has made a lasting impact in the field of integrated circuits and semiconductor devices.

Latest Patents

One of Adams' latest patents focuses on a semiconductor device that includes an active region and two layers with different stress characteristics. This innovative integrated circuit features a device with an active region that comprises a channel region oriented in both transverse and lateral directions. Additionally, the device includes an isolation region adjacent to the active region, which is designed to enhance performance by managing stress levels effectively. The isolation region consists of a first region under a specific type of stress and a second region that may experience either a lesser stress of the same type or an opposite type of stress.

Career Highlights

Throughout his career, Vance H Adams has worked with notable companies in the semiconductor industry, including Freescale Semiconductor, Inc. and NXP USA, Inc. His experience in these organizations has allowed him to develop and refine his expertise in semiconductor technology, leading to his numerous patents and innovations.

Collaborations

Adams has collaborated with several talented individuals in the field, including Brian A Winstead and Paul Grudowski. These partnerships have contributed to the advancement of semiconductor technology and the successful development of innovative solutions.

Conclusion

Vance H Adams stands out as a key figure in the semiconductor industry, with a strong portfolio of patents and a history of collaboration with other experts. His work continues to influence the development of advanced semiconductor devices, showcasing his dedication to innovation and excellence in technology.

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2 patents (EPO):

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Inventor’s Patent Attorneys refers to legal professionals with specialized expertise in representing inventors throughout the patent process. These attorneys assist inventors in navigating the complexities of patent law, including filing patent applications, conducting patent searches, and protecting intellectual property rights. They play a crucial role in helping inventors secure patents for their innovative creations.