The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2007
Filed:
Aug. 24, 2004
Jian Chen, Austin, TX (US);
Michael A. Mendicino, Austin, TX (US);
Vance H. Adams, Austin, TX (US);
Choh-fei Yeap, San Diego, CA (US);
Venkat R. Kolagunta, Austin, TX (US);
Jian Chen, Austin, TX (US);
Michael A. Mendicino, Austin, TX (US);
Vance H. Adams, Austin, TX (US);
Choh-Fei Yeap, San Diego, CA (US);
Venkat R. Kolagunta, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A transistor comprises a source and drain positioned within an active region. A gate overlies a channel area of the active region, wherein the channel region separates the source and drain. The transistor further comprises at least one stress modifier and capacitive reduction feature extending from the source to the drain and underlying the gate for reducing capacitance associated with the gate, source and drain. The at least one stress modifier and capacitive reduction feature comprises dielectric and includes a shape defined at least partially by the active region.