The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2006

Filed:

May. 28, 2004
Applicants:

Scott K. Pozder, Austin, TX (US);

Salih M. Celik, Austin, TX (US);

Byoung W. Min, Austin, TX (US);

Vance H. Adams, Austin, TX (US);

Inventors:

Scott K. Pozder, Austin, TX (US);

Salih M. Celik, Austin, TX (US);

Byoung W. Min, Austin, TX (US);

Vance H. Adams, Austin, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated circuit with a first plurality of transistors formed on a first wafer and second plurality of transistors formed on a second wafer. At least a substantial majority of the transistor of the first transistor are of a first conductivity type and at least a substantial majority of the transistors of the second plurality are of a second conductivity type. After wafers are bonded together, a portion of the second wafer is removed wherein the strain of the channels of the second plurality of transistors is more compressive than the strain of the channels of the first plurality of transistors.


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