The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2007
Filed:
Aug. 24, 2004
Marius K. Orlowski, Austin, TX (US);
Vance H. Adams, Austin, TX (US);
Chun-li Liu, Mesa, AZ (US);
Brian A. Winstead, Austin, TX (US);
Marius K. Orlowski, Austin, TX (US);
Vance H. Adams, Austin, TX (US);
Chun-Li Liu, Mesa, AZ (US);
Brian A. Winstead, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method and apparatus is presented that provides performance enhancement in a semiconductor device. In one embodiment, a first current region (), a channel region and a second current region () are adjacent each other. The second current region () has a content of a first element of an alloy greater than a content of the first element in the first current region (), wherein the second current region () has a content of the first element greater than a content of the first element in the channel region, the alloy further comprises a second element, the first element has a first valence number, and the second element has a second valence number. Furthermore, the sum of the first valence number and the second valence number is eight.