Company Filing History:
Years Active: 2011-2017
Title: **Ung-hwan Pi: A Pioneer in Magnetoresistive Technologies**
Introduction
Ung-hwan Pi is a distinguished inventor based in Seoul, South Korea, known for his significant contributions to the field of magnetoresistive structures and magnetic random-access memory devices. With a remarkable portfolio of 21 patents, he has made substantial strides in enhancing memory technologies, impacting various electronic applications.
Latest Patents
Ung-hwan Pi's latest patents showcase his innovative approach to memory devices. His work on "Magnetoresistive structures, magnetic random-access memory devices including the same and methods of manufacturing the magnetoresistive structure" includes a first magnetic layer with a fixed magnetization direction, a second magnetic layer with a variable magnetization direction, and specialized layers that enhance magnetoresistance. Additionally, he developed a "Memory device using spin hall effect and methods of manufacturing and operating the memory device," wherein operational currents in a bit line lead to spin currents in magnetic tunnel junction cells, significantly improving device functionality.
Career Highlights
Ung-hwan has garnered experience at prominent companies, including Samsung Electronics Co., Ltd. and Samsung Electronics Co., Ltd. His career is marked by a consistent focus on advancing memory technology, driven by his extensive research and practical applications of his inventions.
Collaborations
Throughout his professional journey, Ung-hwan Pi has collaborated with esteemed coworkers such as Sung-chul Lee and Kwang-seok Kim, contributing to the innovative environment at Samsung and elsewhere. These collaborations have allowed for the development of cutting-edge technologies in the field of magnetoresistive memory devices.
Conclusion
Ung-hwan Pi's innovative contributions and impressive patent portfolio underscore his role as a leading inventor in the realm of magnetoresistive technologies. His work continues to shape the future of memory devices, making significant advancements that enhance electronic performance and storage capabilities.