Seoul, South Korea

Ung-hwan Pi

USPTO Granted Patents = 21 

 

Average Co-Inventor Count = 5.3

ph-index = 5

Forward Citations = 68(Granted Patents)


Company Filing History:


Years Active: 2011-2017

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21 patents (USPTO):

Title: **Ung-hwan Pi: A Pioneer in Magnetoresistive Technologies**

Introduction

Ung-hwan Pi is a distinguished inventor based in Seoul, South Korea, known for his significant contributions to the field of magnetoresistive structures and magnetic random-access memory devices. With a remarkable portfolio of 21 patents, he has made substantial strides in enhancing memory technologies, impacting various electronic applications.

Latest Patents

Ung-hwan Pi's latest patents showcase his innovative approach to memory devices. His work on "Magnetoresistive structures, magnetic random-access memory devices including the same and methods of manufacturing the magnetoresistive structure" includes a first magnetic layer with a fixed magnetization direction, a second magnetic layer with a variable magnetization direction, and specialized layers that enhance magnetoresistance. Additionally, he developed a "Memory device using spin hall effect and methods of manufacturing and operating the memory device," wherein operational currents in a bit line lead to spin currents in magnetic tunnel junction cells, significantly improving device functionality.

Career Highlights

Ung-hwan has garnered experience at prominent companies, including Samsung Electronics Co., Ltd. and Samsung Electronics Co., Ltd. His career is marked by a consistent focus on advancing memory technology, driven by his extensive research and practical applications of his inventions.

Collaborations

Throughout his professional journey, Ung-hwan Pi has collaborated with esteemed coworkers such as Sung-chul Lee and Kwang-seok Kim, contributing to the innovative environment at Samsung and elsewhere. These collaborations have allowed for the development of cutting-edge technologies in the field of magnetoresistive memory devices.

Conclusion

Ung-hwan Pi's innovative contributions and impressive patent portfolio underscore his role as a leading inventor in the realm of magnetoresistive technologies. His work continues to shape the future of memory devices, making significant advancements that enhance electronic performance and storage capabilities.

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