The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2016

Filed:

Jan. 23, 2014
Applicants:

Ung-hwan Pi, Seoul, KR;

Kwang-seok Kim, Seoul, KR;

Kee-won Kim, Suwon-si, KR;

Sung-chul Lee, Osan-si, KR;

Young-man Jang, Hwaseong-si, KR;

Inventors:

Ung-hwan Pi, Seoul, KR;

Kwang-seok Kim, Seoul, KR;

Kee-won Kim, Suwon-si, KR;

Sung-chul Lee, Osan-si, KR;

Young-man Jang, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01); G11C 11/18 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/18 (2013.01); H01L 27/222 (2013.01); H01L 43/08 (2013.01);
Abstract

A memory device using a spin hall effect, and methods of manufacturing and operating the memory device, include applying a first operational current to a bit line of the memory device such that a spin current is applied to a magnetic tunnel junction (MTJ) cell coupled to the bit line due to a material in the bit line, wherein the bit line is electrically connected to a word line via the MTJ cell, and the word line intersects the bit line.


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