The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Dec. 07, 2011
Kwang-seok Kim, Seongnam-si, KR;
U-in Chung, Seoul, KR;
Jai-kwang Shin, Anyang-si, KR;
Kee-won Kim, Suwon-si, KR;
Sung-chul Lee, Osan-si, KR;
Ung-hwan Pi, Seoul, KR;
Kwang-seok Kim, Seongnam-si, KR;
U-In Chung, Seoul, KR;
Jai-kwang Shin, Anyang-si, KR;
Kee-won Kim, Suwon-si, KR;
Sung-chul Lee, Osan-si, KR;
Ung-hwan Pi, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A storage node of a magnetic memory device includes: a lower magnetic layer, a tunnel barrier layer formed on the lower magnetic layer, and a free magnetic layer formed on the tunnel barrier. The free magnetic layer has a magnetization direction that is switchable in response to a spin current. The free magnetic layer has a cap structure surrounding at least one material layer on which the free magnetic layer is formed.