The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Nov. 20, 2012
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Sung-chul Lee, Osan-si, KR;
Kwang-seok Kim, Seongnam-si, KR;
Kee-won Kim, Suwon-si, KR;
Young-man Jang, Hwaseong-si, KR;
Ung-hwan Pi, Seoul, KR;
Samsung Electronics., Ltd., Gyeonggi-do, KR;
Abstract
A thermally stable Magnetic Tunnel Junction (MTJ) cell, and a memory device including the same, include a pinned layer having a pinned magnetization direction, a separation layer on the pinned layer, and a free layer on the separation layer and having a variable magnetization direction. The pinned layer and the free layer include a magnetic material having Perpendicular Magnetic Anisotropy (PMA). The free layer may include a central part and a marginal part on a periphery of the central part. The free layer is shaped in the form of a protrusion in which the central part is thicker than the marginal part.