The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Jan. 29, 2014
Kee-won Kim, Suwon-si, KR;
Kwang-seok Kim, Seoul, KR;
Sung-chul Lee, Osan-si, KR;
Young-man Jang, Hwaseong-si, KR;
Ung-hwan Pi, Seoul, KR;
Kee-won Kim, Suwon-si, KR;
Kwang-seok Kim, Seoul, KR;
Sung-chul Lee, Osan-si, KR;
Young-man Jang, Hwaseong-si, KR;
Ung-hwan Pi, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Magnetoresistive structures, magnetic random-access memory devices including the same, and methods of manufacturing the magnetoresistive structure, include a first magnetic layer having a magnetization direction that is fixed, a second magnetic layer corresponding to the first magnetic layer, wherein a magnetization direction of the second magnetic layer is changeable, and a magnetoresistance (MR) enhancing layer and an intermediate layer both between the first magnetic layer and the second magnetic layer.