The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Feb. 19, 2014
Ung-hwan Pi, Seoul, KR;
Kwang-seok Kim, Seoul, KR;
Kee-won Kim, Suwon-si, KR;
Sung-chul Lee, Osan-si, KR;
Young-man Jang, Hwaseong-si, KR;
Ung-hwan Pi, Seoul, KR;
Kwang-seok Kim, Seoul, KR;
Kee-won Kim, Suwon-si, KR;
Sung-chul Lee, Osan-si, KR;
Young-man Jang, Hwaseong-si, KR;
Samsung Electornics Co., Ltd., Gyeonggi-do, KR;
Abstract
Magnetic memory devices include a magnetoresistive cell including a free layer having a variable magnetization direction and a pinned layer having a fixed magnetization direction, a bit line on the magnetoresistive cell and including a spin Hall effect material layer exhibiting a spin Hall effect and contacting the free layer; and a lower electrode under the magnetoresistive cell. A voltage is applied between the bit line and the lower electrode so that current passes through the magnetoresistive cell.