Company Filing History:

14 out of 996

Abb Research Ltd.

Years Active: 1998-2002

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17 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6469359 - Semiconductor device and a method for production thereof (2002-10-22),

2. 6313488 - Bipolar transistor having a low doped drift layer of crystalline SiC (2001-11-06),

3. 6201280 - Transistor of SIC (2001-03-13),

4. 6150671 - Semiconductor device having high channel mobility and a high breakdown (2000-11-21),

5. 6091108 - Semiconductor device of SiC having an insulated gate and buried grid (2000-07-18),

6. 6040237 - Fabrication of a SiC semiconductor device comprising a pn junction with (2000-03-21),

7. 6002159 - SiC semiconductor device comprising a pn junction with a voltage (1999-12-14),

8. 5977605 - SiC Semiconductor device comprising a pn Junction with a voltage (1999-11-02),

9. 5967795 - SiC semiconductor device comprising a pn junction with a voltage (1999-10-19),

10. 5932894 - SiC semiconductor device comprising a pn junction (1999-08-03),

11. 5923051 - Field controlled semiconductor device of SiC and a method for production (1999-07-13),

12. 5914500 - Junction termination for SiC Schottky diode (1999-06-22),

13. 5909039 - Insulated gate bipolar transistor having a trench (1999-06-01),

14. 5831287 - Bipolar semiconductor device having semiconductor layers of SiC and a (1998-11-03),

15. 5801836 - Depletion region stopper for PN junction in silicon carbide (1998-09-01),

Title: Ulf Gustafsson: A Pioneer in Semiconductor Innovations

Introduction: Ulf Gustafsson is a notable inventor based in Linköping, Sweden, recognized for his significant contributions to the field of semiconductor technology. With a portfolio of 17 patents, his work has played a crucial role in advancing the capabilities of semiconductor devices.

Latest Patents: Among Ulf Gustafsson's latest innovations are two notable patents. The first is for a semiconductor device and a method for production thereof, which describes a planar structured semiconductor device featuring a pn-junction. This device includes layers doped with different conductivity types and incorporates an innovative edge termination designed to enhance performance. The second patent pertains to a bipolar transistor that utilizes a low-doped drift layer of crystalline silicon carbide (SiC). This technology aims to improve the efficiency and effectiveness of bipolar transistors by incorporating materials with varying energy gaps.

Career Highlights: Ulf's career has been marked by his tenure at prestigious companies, including ABB Research Ltd. and Asea Brown Boveri AB. His work in these research-intensive environments has allowed him to develop multiple groundbreaking technologies that impact the semiconductor industry.

Collaborations: Throughout his career, Ulf has collaborated with notable colleagues, including Mietek Bakowski and Christopher Ian Harris. These partnerships have facilitated the exchange of ideas and have contributed to the development of innovative solutions in semiconductor engineering.

Conclusion: Ulf Gustafsson is a distinguished inventor whose pioneering work in semiconductor technology has earned him recognition and respect within the industry. With 17 patents to his name, his innovative spirit will undoubtedly continue to inspire future generations of inventors and engineers.

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