The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2000

Filed:

Nov. 17, 1997
Applicant:
Inventors:

Christopher Harris, Sollentuna, SE;

Bo Bijlenga, Skultuna, SE;

Lennart Zdansky, Vaster.ang.s, SE;

Ulf Gustafsson, Linkoping, SE;

Mietek Bakowski, Skultuna, SE;

Andrey Konstantinov, Jarfalla, SE;

Assignee:

ABB Research Ltd., Zurich, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257339 ; 257168 ; 257495 ; 257496 ; 257173 ; 257 77 ; 257135 ;
Abstract

A semiconductor device of SiC is adapted to hold high voltages in the blocking state thereof. The device comprises two parts (1, 2) each comprising one or more semiconductor layers of SiC and connected in series between two opposite terminals of the device, namely a sub-semiconductor device (1) able to withstand only low voltages in the blocking state thereof and a voltage-limiting part (2) able to withstand high voltages in the blocking state of the device and adapted to protect said sub-semiconductor device by taking a major part of the voltage over the device in the blocking state thereof.


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