Järfälla, Sweden

Andrey Konstantinov

This inventor holds 2 USPTO granted patents. Top assignee: Abb Research Ltd.. Active years: 1999-2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Andrey Konstantinov. Retrieved from https://idiyas.com/inventor/andrey-konstantinov

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.7

ph-index = 2

Forward Citations = 66(Granted Patents)


Company Filing History:


Years Active: 1999-2000

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2 patents (USPTO):Explore Patents

Title: Andrey Konstantinov: Innovator in Semiconductor Technology

Introduction

Andrey Konstantinov is a notable inventor based in Jarfalla, Sweden. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to high-voltage devices.

Latest Patents

His latest patents include a "Semiconductor device of SiC having an insulated gate and buried grid." This device is designed to withstand high voltages in a blocking state, comprising two parts that work in series to protect the sub-semiconductor device. The second patent, "Semiconductor device with a junction termination and a method for," involves a unique junction edge termination that enhances the voltage-holding capability of the device.

Career Highlights

Andrey is currently employed at Abb Research Ltd., where he continues to push the boundaries of semiconductor technology. His work focuses on developing devices that can operate efficiently under high-voltage conditions, which is crucial for various applications in electronics.

Collaborations

He collaborates with talented coworkers, including Christopher Ian Harris and Bo Bijlenga, who contribute to the innovative environment at Abb Research Ltd.

Conclusion

Andrey Konstantinov's contributions to semiconductor technology reflect his dedication to innovation and excellence in his field. His patents demonstrate a commitment to advancing high-voltage semiconductor devices, making a significant impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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