The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 1999
Filed:
Jul. 23, 1997
Andrey Konstantinov, Jarfalla, SE;
ABB Research Ltd., Zurich, CH;
Abstract
A semiconductor device has a first low-doped semiconductor layer of SiC, a second layer placed next thereto and a junction between these layers being adapted to hold a voltage in a blocking state of the device with a substantially thicker depletion layer in the first layer than in the second one. A junction edge termination is obtained by a position beveling of the junction, so that the area of the device decreases away from the second layer at least in the first layer close to the junction within at least a part of the depletion layer in the first layer and away therefrom by a peripheral bevel surface. The first and second layers are formed by a hexagonal SiC crystal having the c-axis oriented substantially perpendicular to the junction.