The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 1999
Filed:
Jan. 13, 1997
Applicant:
Inventors:
Assignee:
ABB Research Ltd., Zurich, CH;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257139 ; 257144 ; 257622 ; 257 77 ;
Abstract
An IGBT comprises a drain, a highly doped p-type substrate layer, a highly doped n-type buffer layer, a drift layer, a p-type base layer, a highly doped n-type source region layer and a source electrode. A trench is etched in the base layer and an insulating layer with a gate electrode thereon is arranged on the base layer from the source region layer to the drift layer for the creation of a conducting inversion channel there. A contact portion is provided vertically separated from the source region layer and has the source electrode applied thereon for collecting holes injected from the substrate layer to the drift layer at a vertical distance from the source region layer.