The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
Jan. 17, 2001
Mietek Bakowski, Södertälje, SE;
Ulf Gustafsson, Linköping, SE;
Heinz Lendenmann, Stocksund, SE;
ABB Reasearch Ltd., Zurich, CH;
Abstract
A semiconductor device of planar structure has a pn-junction ( ) formed by a first layer ( ) doped according to a first conductivity type, n or p, and on top thereof a second layer ( ) doped according to a second conductivity type. The second layer has a higher doping concentration than the first layer and a lateral edge thereof is provided with an edge termination with second zones of said second conductivity type separated by first zones ( ) of said first conductivity type arranged so that the total charge and/or the effective sheet charge density of dopants according to said second conductivity type is decreasing towards the laterally outer border ( ) of the edge termination. A third layer ( ) doped according to said first conductivity type is arranged on top of said second layer at least in the region of the edge termination for burying the edge termination of the device thereunder.