The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2000

Filed:

Oct. 23, 1997
Applicant:
Inventors:

Mietek Bakowski, Skultuna, SE;

Ulf Gustafsson, Linkoping, SE;

Kurt Rottner, Kista, SE;

Susan Savage, Jarfalla, SE;

Assignee:

ABB Research Ltd., Zurich, CH;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438521 ; 438518 ; 438931 ;
Abstract

A semiconductor component and a method for processing said component, which comprises a pn junction, where both the p-conducting (3) and the n-conducting layers (2) of the pn junction constitute doped silicon carbide layers and where the edge of the higher doped conducting layer of the pn junction exhibits a charge profile with a stepwise or uniformly decreasing total charge or effective surface charge density from the initial value at the main pn junction to a zero or almost zero total charge or charge density at the outermost edge of the junction following a radial direction from the central part of the junction towards the outermost edge.


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