Company Filing History:
Years Active: 1997-2004
Title: Kurt Rottner: Innovator in Semiconductor Technology
Introduction
Kurt Rottner is a notable inventor based in Kista, Sweden. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon carbide (SiC) materials. With a total of 9 patents to his name, Rottner's work has advanced the capabilities of electronic devices.
Latest Patents
One of Rottner's latest patents is a method for producing a region doped with boron in a SiC-layer. This innovative method involves ion implantation of boron into a crystalline SiC layer, followed by a heating step to activate the boron electrically. Additionally, the method includes implanting carbon atoms to create carbon interstitials, enhancing the material's properties. Another significant patent is for a Schottky diode of SiC, which features a substrate layer, a drift layer, and emitter layer regions. This design allows for efficient operation in blocking states, making it a valuable advancement in diode technology.
Career Highlights
Throughout his career, Kurt Rottner has worked with prominent companies in the semiconductor industry, including Abb Research Ltd. and Cree GmbH. His experience in these organizations has contributed to his expertise and innovative capabilities in the field.
Collaborations
Rottner has collaborated with notable professionals such as Mietek Bakowski and Adolf Schoner. These partnerships have likely fostered a creative environment that has led to the development of his groundbreaking patents.
Conclusion
Kurt Rottner's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to impact the development of advanced electronic devices.