The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2000
Filed:
Feb. 20, 1997
Willy Hermansson, Vaster.ang.s, SE;
Bo Bijlenga, Skultuna, SE;
Lennart Ramberg, Bromma, SE;
Kurt Rottner, Kista, SE;
Lennart Zdansky, Vaster.ang.s, SE;
Christopher Ian Harris, Sollentuna, SE;
Mietek Bakowski, Skultuna, SE;
Adolf Schoner, Kista, SE;
Nils Lundberg, Uppsala, SE;
Mikael Ostling, Sp.ang.nga, SE;
Fanny Dahlquist, Stockholm, SE;
ABB Research Ltd., Zurich, CH;
Abstract
A Schottky diode of SiC has a substrate layer, a drift layer and emitter layer regions formed in the drift layer. A metal layer makes an ohmic contact to the emitter layer regions and Schottky contact to the drift layer. A depletion of the drift layer region between two adjacent emitter layer regions is allowed in the blocking state of the diode making the two adjacent p-type emitter layer regions form a continuous depleted region therebetween in this state.