Lennart Ramberg

Title: Lennart Ramberg: Innovator in Silicon Carbide Technology

Introduction

Lennart Ramberg is a notable inventor based in Bromma, Sweden. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon carbide (SiC) devices. With a total of 2 patents, his work has advanced the capabilities of high-voltage semiconductor devices.

Latest Patents

One of Lennart's latest patents is for a Schottky diode of SiC and a method for production thereof. This innovative diode features a substrate layer, a drift layer, and emitter layer regions formed within the drift layer. A metal layer creates an ohmic contact to the emitter layer regions and a Schottky contact to the drift layer. Notably, the design allows for a depletion of the drift layer region between two adjacent emitter layer regions in the blocking state of the diode. This configuration enables the two adjacent p-type emitter layer regions to form a continuous depleted region in this state.

Another significant patent involves a high voltage silicon carbide semiconductor device with a bended edge. This design enhances the performance and reliability of SiC devices, making them suitable for various high-voltage applications.

Career Highlights

Lennart Ramberg is currently associated with Abb Research Ltd., where he continues to innovate in the semiconductor field. His expertise in silicon carbide technology has positioned him as a key player in advancing high-voltage semiconductor solutions.

Collaborations

Lennart has collaborated with notable colleagues such as Willy Hermansson and Bo Bijlenga. Their combined efforts have contributed to the development of cutting-edge semiconductor technologies.

Conclusion

Lennart Ramberg's contributions to silicon carbide technology through his patents and collaborations highlight his role as an influential inventor in the semiconductor industry. His work continues to pave the way for advancements in high-voltage applications.