Company Filing History:
Years Active: 2000
Title: Fanny Dahlquist: Innovator in Schottky Diode Technology
Introduction
Fanny Dahlquist is a prominent inventor based in Stockholm, Sweden. She has made significant contributions to the field of semiconductor technology, particularly with her innovative work on Schottky diodes.
Latest Patents
Fanny holds a patent for a Schottky diode of SiC and a method for production thereof. This invention features a substrate layer, a drift layer, and emitter layer regions formed in the drift layer. A metal layer creates an ohmic contact to the emitter layer regions and a Schottky contact to the drift layer. In the blocking state of the diode, a depletion of the drift layer region between two adjacent emitter layer regions is allowed, forming a continuous depleted region in this state.
Career Highlights
Throughout her career, Fanny has worked with notable companies such as ABB Research Ltd. and Cree GmbH. Her expertise in semiconductor technology has positioned her as a key player in the industry.
Collaborations
Fanny has collaborated with esteemed colleagues, including Willy Hermansson and Bo Bijlenga, contributing to advancements in her field.
Conclusion
Fanny Dahlquist's innovative work in Schottky diode technology showcases her significant impact on the semiconductor industry. Her contributions continue to influence advancements in this critical area of technology.