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For the Inventor, By the Inventor

Taipei, Taiwan

Tung-Yang Lin

USPTO Granted Patents = 15

Average Co-Inventor Count = 3.6

ph-index = 1

Forward Citations = 5(Granted Patents)


Location History:

  • Hsinchu, TW (2022)
  • New Taipei, TW (2015 - 2024)

Company Filing History:

goldMedal15 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2015-2025

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15 patents (USPTO):Explore Patents
1. 12230709 - Transistor structure and manufacturing method of the same (2025-02-18),
2. 12027526 - Breakdown voltage capability of high voltage device (2024-07-02),
3. 11532701 - Semiconductor isolation structure and method for making the semiconductor isolation structure (2022-12-20),
4. 11508757 - Breakdown voltage capability of high voltage device (2022-11-22),
5. 11456380 - Transistor structure and manufacturing method of the same (2022-09-27),
6. 10038090 - Power MOSFETs and methods for forming the same (2018-07-31),
7. 10014288 - Ultra high voltage electrostatic discharge protection device with current gain (2018-07-03),
8. 9865748 - Semiconductor structure and method for manufacturing the same (2018-01-09),
9. 9627551 - Ultrahigh-voltage semiconductor structure and method for manufacturing the same (2017-04-18),
10. 9601616 - Power MOSFETs and methods for forming the same (2017-03-21),
11. 9431531 - Semiconductor device having drain side contact through buried oxide (2016-08-30),
12. 9412863 - Enhanced breakdown voltages for high voltage MOSFETS (2016-08-09),
13. 9379179 - Ultra high voltage electrostatic discharge protection device with current gain (2016-06-28),
14. 9356139 - Power MOSFETs and methods for forming the same (2016-05-31),
15. 9000517 - Power MOSFETs and methods for forming the same (2015-04-07),

Title: Innovator Spotlight: Tung-Yang Lin

Introduction: Tung-Yang Lin is a prominent inventor based in New Taipei, Taiwan, known for his innovative contributions to the field of semiconductor technology. With 15 patents to his name, he continues to push the boundaries of modern electronics and integrated circuits.

Latest Patents: Lin's latest developments include a novel transistor structure and a manufacturing method that enhances device performance. His patent for a transistor structure reveals intricate designs involving a substrate, gate electrodes, and well configurations, significantly improving circuit functionality. Additionally, he has introduced a patent focusing on the breakdown voltage capability of high voltage devices. This patent describes an integrated chip with advanced features such as isolation structures and conductive vias that optimize the stability and efficiency of electronic devices.

Career Highlights: Tung-Yang Lin has made significant strides in the semiconductor industry while working at Taiwan Semiconductor Manufacturing Company Ltd. (TSMC). His work has been instrumental in advancing technologies that support high voltage applications and improved transistor designs. Lin's expertise continues to shape the landscape of semiconductor manufacturing and design.

Collaborations: Throughout his career, Lin has collaborated with talented professionals such as Ruey-Hsin Liu and Hsin-Chih Chiang. These partnerships have fostered an environment of innovation, leading to groundbreaking advancements in semiconductor technology.

Conclusion: Tung-Yang Lin stands out as a dedicated inventor whose innovative spirit drives advancements in the semiconductor industry. His patents not only reflect his knowledge and creativity but also contribute significantly to the evolution of modern electronic devices. As Lin continues to develop and refine his inventions, he remains a key figure in the realm of semiconductor technology.

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