The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2022
Filed:
Mar. 21, 2017
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Tung-Yang Lin, New Taipei, TW;
Hsueh-Liang Chou, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7831 (2013.01); H01L 29/401 (2013.01); H01L 29/6656 (2013.01); H01L 29/66484 (2013.01); H01L 29/66492 (2013.01); H01L 29/7835 (2013.01);
Abstract
Present disclosure provides a transistor structure, including a substrate, a first gate over the substrate, a second gate over the substrate and laterally in contact with the first gate, a first conductive region of a first conductivity type in the substrate, self-aligning to a side of the first gate, and a second conductive region of the first conductivity type in the substrate, self-aligning to a side of the second gate. A method for manufacturing the transistor structure is also disclosed.