The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Jun. 06, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hsin-Chih Chiang, Hsinchu, TW;
Tung-Yang Lin, New Taipei, TW;
Ruey-Hsin Liu, Hsinchu, TW;
Ming-Ta Lei, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor substrate. A first semiconductor region is over a portion of the semiconductor substrate to a first depth. A second semiconductor region is in the first semiconductor region. A third semiconductor region is in the first semiconductor region. A fourth semiconductor region is outside the first semiconductor region. A fifth semiconductor region is outside the first semiconductor region to a fifth depth, the fifth semiconductor region being adjacent the fourth semiconductor region. A sixth semiconductor region is below the fifth semiconductor region and to a sixth depth. The sixth depth is equal to the first depth. A first electrode is connected to the third semiconductor region. A second electrode is connected to the fourth and fifth semiconductor regions. The fifth semiconductor region is configured to cause an increase in a current during a cathode to anode positive bias operation between the first and second electrodes.