The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2017

Filed:

Sep. 13, 2013
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Hsin-Chih Chiang, Hsinchu, TW;

Tung-Yang Lin, New Taipei, TW;

Chih-Chang Cheng, Hsinchu, TW;

Ruey-Hsin Liu, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/87 (2006.01);
U.S. Cl.
CPC ...
H01L 29/87 (2013.01); H01L 29/66121 (2013.01);
Abstract

The disclosure provides an ultrahigh-voltage (UHV) semiconductor structure including a first electrical portion, a second electrical portion and a bridged conductive layer. In which, the first electrical portion and the second electrical portion are isolated, and directly connected to each other through the bridged conductive layer. Thus, there is no current leakage occurring in the UHV semiconductor structure disclosed in this disclosure. And a method for manufacturing the UHV semiconductor structure also provides herein.


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