The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2018

Filed:

Apr. 14, 2017
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Hsin-Chih Chiang, Hsinchu, TW;

Tung-Yang Lin, New Taipei, TW;

Chih-Chang Cheng, Hsinchu, TW;

Ruey-Hsin Liu, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/68 (2006.01); H01L 29/87 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/87 (2013.01); H01L 29/0607 (2013.01); H01L 29/66121 (2013.01);
Abstract

A semiconductor structure includes a semiconductor substrate having a first electrical portion, a second electrical portion, and a bridged conductive layer. The first electrical portion includes a first semiconductor well, a second semiconductor well in the first semiconductor well, and a third semiconductor well and a fourth semiconductor well in the second semiconductor well. The second electrical portion includes a fifth semiconductor well, a semiconductor layer in the fifth semiconductor well, and a sixth semiconductor well and a seventh semiconductor well in the fifth semiconductor well. The semiconductor layer has separated first and second portions. The bridged conductive layer connects the fourth semiconductor well and the sixth semiconductor well.


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