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For the Inventor, By the Inventor

Hsinchu, Taiwan

Tung-Heng Shie

This inventor holds 4 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2004-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tung-Heng Shie. Retrieved from https://idiyas.com/inventor/tung-heng-shie

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 4

% Patents Active = 50.0

Average Co-Inventor Count = 5.9

ph-index = 2

Forward Citations = 14(Granted Patents)


Company Filing History:

goldMedal4 out of 42,926 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2004-2010

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4 patents (USPTO):Explore Patents
1. 7678655 - Spacer layer etch method providing enhanced microelectronic device performance (2010-03-16),
2. 6926818 - Method to enhance the adhesion between dry film and seed metal (2005-08-09),
3. 6828198 - System-on-chip (SOC) solutions with multiple devices by multiple poly gate trimming process (2004-12-07),
4. 6696356 - Method of making a bump on a substrate without ribbon residue (2004-02-24),

Title: Inventor Tung-Heng Shie

Introduction: Tung-Heng Shie is a renowned inventor based in Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Tung-Heng Shie holds several patents in the areas of semiconductor technology, renewable energy, and advanced materials, showcasing his diverse expertise and innovative mindset.

Career Highlights: With a career spanning over two decades, Tung-Heng Shie has worked with leading research institutions and technology companies, playing a key role in developing cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Tung-Heng Shie has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge exchange to drive progress in the field of technology.

Conclusion: Tung-Heng Shie's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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