The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2004
Filed:
Dec. 31, 2001
Li-Hsin Tseng, Taichung, TW;
Hsiu-Mei Yu, Hsinchu, TW;
Ta-Yang Lin, Changhua, TW;
Fang-Chung Liu, Hsinchu, TW;
Kai-Ming Ching, Taiping, TW;
Tung-Heng Shie, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Abstract
A method of forming a bump on a substrate such as a semiconductor wafer or flip chip without producing metal ribbon residue. The method includes the step of providing a semiconductor device having a contact pad and having an upper passivation layer and an opening formed in the upper passivation layer exposing a portion of the contact pad. An under bump metallurgy is deposited over the upper passivation layer and the contact pad. A photoresist layer is deposited over the under bump metallurgy. The photoresist layer is a dry film photoresist. The photoresist layer is patterned to provide an opening in the photoresist layers down to the under bump metallurgy and aligned with the contact pad. Additional energy is applied to the photoresist layer to improve the adhesion of the photoresist layer to the under bump metallurgy. An electrically conductive material is deposited into the opening formed in the photoresist layers and overlying the under bump metallurgy and aligned with contact pad. Thereafter the remaining portions of the photoresist layer are removed. The electrically conductive material is reflown to provide a bump on the semiconductor device.