Location History:
- Hsinchu, TW (2013 - 2015)
- Nantou, TW (2017 - 2019)
Company Filing History:
3 out of 40,739 
2 out of 4,304 
Years Active: 2013-2019
Title: Innovations of Tsung-Cheng Chan in Semiconductor Technology
Introduction
Tsung-Cheng Chan is a prominent inventor based in Nantou, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on enhancing the performance and reliability of semiconductor devices.
Latest Patents
One of his latest patents is titled "Method for forming semiconductor device structure having conductive structure with twin boundaries." This method involves forming a first conductive structure over a substrate, which includes twin boundaries. The process conditions are manipulated to promote the formation of these twin boundaries, resulting in an increased failure current density (FCD) compared to a baseline FCD of a corresponding second conductive structure. This innovative approach ensures that the first conductive structure maintains a resistance similar to that of the second structure. Another patent under the same title further elaborates on the method, emphasizing the control of twin boundary density to optimize atomic migration ratios.
Career Highlights
Tsung-Cheng Chan has worked with notable organizations such as Taiwan Semiconductor Manufacturing Company Ltd. and Tsinghua University. His experience in these institutions has allowed him to collaborate on various cutting-edge projects in semiconductor research and development.
Collaborations
Some of his notable coworkers include Yu-Lun Chueh and Chien-Neng Liao. Their collaborative efforts have contributed to advancements in semiconductor technologies.
Conclusion
Tsung-Cheng Chan's innovative work in semiconductor technology has led to significant advancements in the field. His patents reflect a deep understanding of material properties and device performance, making him a key figure in semiconductor research.