The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Aug. 09, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Jian-Hong Lin, Huwei, TW;
Chwei-Ching Chiu, Hsinchu, TW;
Yung-Huei Lee, New Taipei, TW;
Chien-Neng Liao, Taichung, TW;
Yu-Lun Chueh, Hsinchu, TW;
Tsung-Cheng Chan, Nantou, TW;
Chun-Lung Huang, Minxiong Township, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method, for forming a semiconductor device structure, includes: forming a conductive structure over a substrate, wherein the conductive structure includes twin boundaries. The forming the conductive structure includes: manipulating process conditions so as to promote formation of the twin boundaries and yet control a density of the twin boundaries to be outside a range for which a portion of a curve is an asymptote of a constant value, the curve representing values of an atomic migration ratio corresponding to values of the density of the twin boundaries.