The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2015

Filed:

Apr. 30, 2014
Applicant:

National Tsing Hua University, Hsinchu, TW;

Inventors:

Yu-Lun Chueh, Hsinchu, TW;

Hung-Wei Tsai, Hsinchu, TW;

Tsung-Cheng Chan, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 35/34 (2006.01);
U.S. Cl.
CPC ...
H01L 35/34 (2013.01);
Abstract

The object of the present invention is to provide a method for preparing a nano-sheet array structure of a Group V-VI semiconductor, comprising: (A) providing an electrolyte containing a hydrogen ion and disposing an auxiliary electrode and a working electrode in the electrolyte, wherein the working electrode comprises a Group V-VI semiconductor bulk; and (B) applying a redox reaction bias to the auxiliary electrode and the working electrode to form a nano-sheet array structure on the bulk.


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