The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Nov. 30, 2018
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Jian-Hong Lin, Huwei, TW;
Chwei-Ching Chiu, Hsinchu, TW;
Yung-Huei Lee, New Taipei, TW;
Chien-Neng Liao, Taichung, TW;
Yu-Lun Chueh, Hsinchu, TW;
Tsung-Cheng Chan, Nantou, TW;
Chun-Lung Huang, Minxiong Township, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of forming a semiconductor device structure includes: forming a first conductive structure over a substrate, the first conductive structure including twin boundaries; and wherein the forming the first conductive structure includes manipulating process conditions so as to promote formation of the twin boundaries resulting in a promoted density of twin boundaries such that the first conductive structure has an increased failure current density (FCD) relative to a baseline FCD of an otherwise substantially corresponding second conductive structure which has an unpromoted density of twin boundaries, the unpromoted density being less than the promoted density and such that the first conductive structure has a resistance which is substantially the same as the second conductive structure.