Saratoga, CA, United States of America

Tsann Lin

USPTO Granted Patents = 96 

Average Co-Inventor Count = 1.8

ph-index = 21

Forward Citations = 1,330(Granted Patents)

Forward Citations (Not Self Cited) = 1,252(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Campbell, CA (US) (1994 - 1996)
  • Saratoga, CA (US) (1996 - 2015)

Company Filing History:


Years Active: 1994-2015

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Areas of Expertise:
Tunneling Magnetoresistance
Magnetic Tunnel Junction
Current-Perpendicular-To-Plane
Giant Magnetoresistance
Ferromagnetic Shielding
Magnetic Sensors
Read Sensor Fabrication
Bias Stack Structures
Amorphous Blocking Layers
Magnesium Oxide Barrier
Dual Spin Valve Sensors
Resistive Lapping Guide
96 patents (USPTO):Explore Patents

Title: The Innovative Journey of Tsann Lin

Introduction: Tsann Lin, a pioneering inventor based in Saratoga, CA (US), has made significant contributions to the world of technology and innovation through his groundbreaking inventions.

Latest Patents: Tsann Lin holds several patents in various fields such as semiconductor devices, integrated circuits, and electronic systems. His most recent patents focus on advanced nanotechnology applications in the healthcare industry.

Career Highlights: With a career spanning over three decades, Tsann Lin has worked with prestigious research institutions and leading technology companies. He has been instrumental in developing cutting-edge technologies that have revolutionized the semiconductor industry.

Collaborations: Throughout his career, Tsann Lin has collaborated with top engineers, scientists, and researchers to bring his innovative ideas to life. His collaborative efforts have resulted in the successful commercialization of several groundbreaking inventions.

Conclusion: Tsann Lin's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of technology. His contributions have not only shaped the semiconductor industry but have also paved the way for future advancements in the field.

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