The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2012

Filed:

Nov. 12, 2007
Applicants:

David Eugene Heim, Redwood City, CA (US);

Kim Y. Lee, Fremont, CA (US);

Tsann Lin, Saratoga, CA (US);

Jih-shiuan Luo, San Jose, CA (US);

Inventors:

David Eugene Heim, Redwood City, CA (US);

Kim Y. Lee, Fremont, CA (US);

Tsann Lin, Saratoga, CA (US);

Jih-Shiuan Luo, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/39 (2006.01);
U.S. Cl.
CPC ...
Abstract

A narrow track-width magnetoresistive sensor by defining a trench formed between first and second hard bias layers and depositing the sensor into the trench. The sensor can include a sensor stack sandwiched between first and second electrically conductive lead layers. First and second electrically insulating side walls are formed at either side of the sensor stack. First and second hard bias layers extend from the sides of the sensor stack, being separated from the sensor stack by the first and second electrically insulating side walls. First and second physically hard insulation layers are provided over each of the hard bias layers.


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