The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Dec. 22, 2010
Tsann Lin, Saratoga, CA (US);
Tsann Lin, Saratoga, CA (US);
HGST Netherlands B.V., Amsterdam, NL;
Abstract
A current-perpendicular-to-plane (CPP) tunneling magnetoresistance (TMR) or giant magnetoresistance (GMR) read sensor with dual seed and cap layers for high-resolution magnetic recording is provided by the invention. The dual seed layers comprise a lower seed layer preferably formed of a nonmagnetic Pt film and an upper seed layer preferably formed of a nonmagnetic Ru film. The lower seed layer separates the upper seed layer from a buffer layer preferably formed of a ferromagnetic Co—Hf film, in order to minimize moment losses at its lower interface and thus define a sharp lower bound of a read gap. In addition, the lower seed layer facilitates the CPP read sensor to exhibit high pinning properties, while the upper seed layer facilitates the CPP read sensor to exhibit robust thermal properties.