The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Oct. 02, 2009
Tsann Lin, Saratoga, CA (US);
Tsann Lin, Saratoga, CA (US);
Hitachi Global Storage Technologies Netherlands B.V., Amsterdam, NL;
Abstract
A tunneling magnetoresistance (TMR) read sensor with a Co—Fe—B lower sense layer and a Co—Hf upper sense layer is disclosed. In order for the dual sense layers to exhibit a negative saturation magnetostriction (λ), their Fe contents are either substantially reduced or even eliminated, instead of adding a conventional Ni—Fe film as an additional sense layer. By optimizing compositions and thicknesses of the dual sense layers, the dual sense layers indeed exhibit a negative λ, while the TMR sensor exhibits a TMR coefficient (ΔR/R) of greater than 80% at a junction resistance-area product (RA) of less than 2 Ω-μm.