The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
May. 10, 2013
Avalanche Technology, Inc., Fremont, CA (US);
Tsann Lin, Saratoga, CA (US);
Avalanche Technology, Inc., Fremont, CA (US);
Abstract
The invention provides a bottom-type perpendicular magnetic tunnel junction (pMTJ) element with thermally stable amorphous blocking layers for high-density nonvolatile data storage. The first blocking layer, preferably formed of an amorphous nonmagnetic film, blocks a polycrystalline diffusion barrier layer with a body-center-cubic (bcc) <110> texture in order for the keeper and lower reference layers of the bottom-type pMTJ element to freely grow with a face-centered-cubic (fcc) <111> texture, thereby developing strong perpendicular magnetic anisotropy (PMA). The second blocking layer, preferably formed of an amorphous ferromagnetic film, blocks the keeper and lower reference layers of the bottom-type pMTJ element in order for the upper reference, barrier and storage layers of the bottom-type pMTJ element to freely grow with a <001> texture, thereby exhibiting a strong tunneling magnetoresistance (TMR) effect.