The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Dec. 26, 2007
Tsann Lin, Saratoga, CA (US);
Tsann Lin, Saratoga, CA (US);
Hitachi Global Storage Technologies Netherlands, B.V., Amsterdam, NL;
Abstract
A current-to-perpendicular-to-plane (CPP) read sensor with multiple reference layers and associated fabrication methods are disclosed. According to one embodiment of the invention, the multiple reference layers of a CPP tunneling magnetoresistance (TMR) read sensor includes a first reference layer formed by a ferromagnetic polycrystalline Co—Fe film, a second reference layer formed by a ferromagnetic substitute-type amorphous Co—Fe—X film where X is Hf, Zr or Y, and a third reference layer formed by a ferromagnetic interstitial-type amorphous Co—Fe—B film. The first reference layer facilitates the CPP TMR read sensor to exhibit high exchange and antiparallel-coupling fields. The second reference layer provides a thermally stable flat surface, thus facilitating the CPP TMR read sensor to exhibit a low ferromagnetic-coupling field. The multiple reference layers may induce spin-dependent scattering, thus facilitating the CPP TMR sensor to exhibit a high TMR coefficient.