Leuven, Belgium

Trong Huynh Bao

USPTO Granted Patents = 11 

 

Average Co-Inventor Count = 3.0

ph-index = 3

Forward Citations = 26(Granted Patents)


Location History:

  • Elsene, BE (2021)
  • Leuven, BE (2019 - 2023)

Company Filing History:


Years Active: 2019-2023

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11 patents (USPTO):

Title: Innovations of Inventor Trong Huynh Bao

Introduction

Trong Huynh Bao is a notable inventor based in Leuven, Belgium. He has made significant contributions to the field of memory technology, holding a total of 11 patents. His work focuses on advanced magnetic tunnel junctions and multibit memory cells, showcasing his expertise in innovative memory solutions.

Latest Patents

Among his latest patents is the "Dual Magnetic Tunnel Junction Stack." This invention features a material layer stack that includes first and second magnetic tunnel junctions, with a top electrode formed on the stack's top face. The design incorporates a shoulder that divides the stack into lower and upper portions, enhancing its functionality. Another significant patent is the "SOT Multibit Memory Cell," which describes a multibit memory cell comprising multiple spin-orbit torque tracks and magnetic tunnel junctions. This technology allows for efficient data storage and retrieval through a series of junction resistances.

Career Highlights

Throughout his career, Trong Huynh Bao has worked with esteemed organizations such as Imec Vzw and Vrije Universiteit Brussel. His experience in these institutions has contributed to his innovative research and development in memory technologies.

Collaborations

Trong has collaborated with notable colleagues, including Julien Ryckaert and Sushil Sakhare. Their combined expertise has further advanced the field of memory technology.

Conclusion

Trong Huynh Bao's contributions to the field of memory technology through his patents and collaborations highlight his role as a leading inventor. His innovative work continues to influence advancements in memory solutions.

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