logo

For the Inventor, By the Inventor

Leuven, Belgium

Trong Huynh Bao

This inventor holds 11 USPTO granted patents and 2 published patent applications and 6 EPO patents. Top assignees: Imec Vzw, Vrije Universiteit Brussel, Katholieke Universiteit Leuven. Active years: 2019-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Trong Huynh Bao. Retrieved from https://idiyas.com/inventor/trong-huynh-bao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 11 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.0

ph-index = 3

Forward Citations = 28(Granted Patents)


Location History:

  • Elsene, BE (2021)
  • Leuven, BE (2019 - 2023)

Company Filing History:

goldMedal11 out of 1,863 
 
Imec Vzw
 patents
silverMedal4 out of 192 
 
Vrije Universiteit Brussel
 patents
bronzeMedal3 out of 631 
 
Katholieke Universiteit Leuven
 patents
where one patent can have more than one assignee

Years Active: 2019-2023

Loading Chart...
Loading Chart...
11 patents (USPTO):Explore Patents
1. 11832525 - Dual magnetic tunnel junction stack (2023-11-28),
2. 11527709 - SOT multibit memory cell (2022-12-13),
3. 11227645 - Spin-torque transfer switchable magnetic tunnel junction unit and a memory device (2022-01-18),
4. 11217488 - Method of forming a semiconductor device (2022-01-04),
5. 11201093 - Method of manufacturing a semiconductor device including the horizontal channel FET and the vertical channel FET (2021-12-14),
6. 11087837 - Circuit cell for a memory device or logic device (2021-08-10),
7. 11018235 - Vertically stacked semiconductor devices having vertical channel transistors (2021-05-25),
8. 10720363 - Method of forming vertical transistor device (2020-07-21),
9. 10522552 - Method of fabricating vertical transistor device (2019-12-31),
10. 10332588 - Static random access memory device having interconnected stacks of transistors (2019-06-25),
11. 10325647 - Non-volatile SRAM cell using resistive memory elements (2019-06-18),

Title: Innovations of Inventor Trong Huynh Bao

Introduction

Trong Huynh Bao is a notable inventor based in Leuven, Belgium. He has made significant contributions to the field of memory technology, holding a total of 11 patents. His work focuses on advanced magnetic tunnel junctions and multibit memory cells, showcasing his expertise in innovative memory solutions.

Latest Patents

Among his latest patents is the "Dual Magnetic Tunnel Junction Stack." This invention features a material layer stack that includes first and second magnetic tunnel junctions, with a top electrode formed on the stack's top face. The design incorporates a shoulder that divides the stack into lower and upper portions, enhancing its functionality. Another significant patent is the "SOT Multibit Memory Cell," which describes a multibit memory cell comprising multiple spin-orbit torque tracks and magnetic tunnel junctions. This technology allows for efficient data storage and retrieval through a series of junction resistances.

Career Highlights

Throughout his career, Trong Huynh Bao has worked with esteemed organizations such as Imec Vzw and Vrije Universiteit Brussel. His experience in these institutions has contributed to his innovative research and development in memory technologies.

Collaborations

Trong has collaborated with notable colleagues, including Julien Ryckaert and Sushil Sakhare. Their combined expertise has further advanced the field of memory technology.

Conclusion

Trong Huynh Bao's contributions to the field of memory technology through his patents and collaborations highlight his role as a leading inventor. His innovative work continues to influence advancements in memory solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…