The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Dec. 11, 2020
Applicants:

Imec Vzw, Leuven, BE;

Katholieke Universiteit Leuven, Leuven, BE;

Inventors:

Mohit Gupta, Heverlee, BE;

Trong Huynh Bao, Leuven, BE;

Assignees:

IMEC vzw, Leuven, BE;

Katholieke Universiteit Leuven, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/10 (2023.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/10 (2023.02); G11C 11/161 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H01F 10/329 (2013.01); H01F 10/3286 (2013.01); H10N 50/80 (2023.02); H10N 50/85 (2023.02);
Abstract

The material layer stack includes first and second magnetic tunnel junctions and a first top electrode formed on a top face of the stack. A shoulder is formed on a lateral face of the stack and divides the stack into a lower portion and an upper portion. A tunnel barrier of the first magnetic tunnel junction is comprised by the lower stack portion and a tunnel barrier of the second magnetic tunnel junction by the upper stack portion. A second top electrode is formed on the shoulder. Each magnetic tunnel junction is adapted to store a bit as a reconfigurable magnetoresistance of its magnetic electrodes. Preferably, a bottom face of the stack is connected to a conductor supporting current induced magnetic polarization switching for the first magnetic tunnel junction by spin-orbit torque. Magnetic polarization switching for the second magnetic tunnel junction is preferably achieved by spin-transfer torque.


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