Average Co-Inventor Count = 4.1

ph-index = 15

Forward Citations = 596(Granted Patents)

Location History:

Nishitama, JP (1993)
Ohme, JP (1994 - 1997)
Plano, TX (US) (1995 - 1997)
Hamura-machi, JP (1998)
Tokyo, JP (1994 - 2003)
Ome, JP (1995 - 2004)
Hamura, JP (1990 - 2007)

Company Filing History:

Texas Instruments Corporation

patents

2 out of 182

Hitachi Vlsi Engineering Corp.

where one patent can have more than one assignee

Years Active: 1990-2007

where 'Filed Patents' based on already Granted Patents

26 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 7199472 - Semiconductor device (2007-04-03),

2. 7005906 - Semiconductor integrated-circuit device and method to speed-up CMOS circuit (2006-02-28),

3. 6809419 - Semiconductor device (2004-10-26),

4. 6721774 - Low power multiplier (2004-04-13),

5. 6553439 - Remote configuration access for integrated circuit devices (2003-04-22),

6. 5818743 - Low power multiplier (1998-10-06),

7. 5742101 - Semiconductor device (1998-04-21),

8. 5701031 - Sealed stacked arrangement of semiconductor devices (1997-12-23),

9. 5633825 - Voltage generating circuit in semiconductor integrated circuit (1997-05-27),

10. 5594279 - Semiconductor device having shield wiring for noise suppression (1997-01-14),

11. 5534817 - Voltage generating circuit (1996-07-09),

12. 5528538 - Voltage generating circuit in semiconductor integrated circuit (1996-06-18),

13. 5514905 - Semiconductor device (1996-05-07),

14. 5453959 - Semiconductor memory device having a self-refreshing control circuit (1995-09-26),

15. 5410507 - Special mode control method for dynamic random access memory (1995-04-25),

Title: Toshiyuki Sakuta: Innovator in Semiconductor Technology

Introduction

Toshiyuki Sakuta, a prominent inventor based in Hamura, Japan, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 26 patents, he has consistently demonstrated his innovative prowess and commitment to advancing electronic devices.

Latest Patents

Among his latest patents, one notable invention pertains to a semiconductor device designed to enhance performance. This device incorporates an upmost wiring layer made of aluminum which is thicker than the underlying copper wiring layer. This configuration lowers the sheet resistance of the upmost layer, effectively stabilizing power conduction and reducing voltage drop from the pads to the ring power lines.

Another groundbreaking patent involves a semiconductor integrated-circuit device and a method for speeding up CMOS circuits. This invention allows for higher-density integration and accelerated operational speeds. It utilizes a combination of enhancement-type and depletion-type MOSFETs between flip-flop circuits to ensure that signal transferring delays remain at or below permissible limits.

Career Highlights

Toshiyuki Sakuta has had an illustrious career, having worked with renowned companies such as Hitachi, Ltd. and Texas Instruments Corporation. His tenure at these organizations has enabled him to apply his innovative ideas to real-world problems, further solidifying his status as a leading figure in semiconductor technology.

Collaborations

Throughout his career, Sakuta has collaborated with esteemed colleagues including Masamichi Ishihara and Gen Murakami. These collaborations have fostered a conducive environment for innovation and have led to the development of several impactful technologies.

Conclusion

Toshiyuki Sakuta exemplifies the spirit of innovation through his extensive work in semiconductor devices. His patents not only reflect his deep understanding of the technology but also pave the way for future advancements in the industry. With his continued contributions, Sakuta remains a key player in the evolution of semiconductor technology.

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