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For the Inventor, By the Inventor

Bunkyo, Japan

Toshiyuki Oshima

This inventor holds 5 USPTO granted patents. Top assignee: Kabushiki Kaisha Toshiba. Active years: 2000-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshiyuki Oshima. Retrieved from https://idiyas.com/inventor/toshiyuki-oshima-718tgidm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 5

% Patents Active = 100.0

Average Co-Inventor Count = 4.1

ph-index = 2

Forward Citations = 8(Granted Patents)


Location History:

  • Tokyo, JP (2000)
  • Bunkyo, JP (2020 - 2022)

Company Filing History:

goldMedal5 out of 53,286 
 
Kabushiki Kaisha Toshiba
 patents

Years Active: 2000-2022

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5 patents (USPTO):Explore Patents
1. 11276774 - Semiconductor device, inverter circuit, driving device, vehicle, and elevator (2022-03-15),
2. 11276758 - Semiconductor device, inverter circuit, driving device, vehicle, and elevator having a reduced on-resistance with a silicon carbide layer (2022-03-15),
3. 11276751 - Semiconductor device, inverter circuit, driving device, vehicle, and elevator (2022-03-15),
4. 10770549 - Semiconductor device, inverter circuit, driving device, vehicle, and elevator (2020-09-08),
5. 6127874 - Skew adjustable IC and a method for designing the same (2000-10-03),

Title: The Innovative Contributions of Toshiyuki Oshima

Introduction

Toshiyuki Oshima is a prominent inventor based in Bunkyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

Oshima's latest patents include a range of innovative technologies. These patents encompass a semiconductor device, inverter circuit, driving device, vehicle, and elevator. One of his notable inventions is a semiconductor device that features a silicon carbide layer with specific structural characteristics. This device includes a trench with varying widths and multiple silicon carbide regions, designed to optimize performance. Another patent details a semiconductor device that incorporates an aluminum nitride layer, enhancing the device's efficiency by reducing on-resistance.

Career Highlights

Toshiyuki Oshima is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has allowed him to push the boundaries of semiconductor technology, contributing to advancements that benefit various industries.

Collaborations

Oshima has collaborated with notable colleagues, including Ryosuke Iijima and Tatsuo Shimizu. These partnerships have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Toshiyuki Oshima's contributions to semiconductor technology are noteworthy and impactful. His patents reflect a commitment to innovation and excellence in engineering. Through his work, he continues to influence the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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