The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
Feb. 27, 2019
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiyuki Oshima, Bunkyo, JP;
Shinya Kyogoku, Nagareyama, JP;
Ryosuke Iijima, Setagaya, JP;
Tatsuo Shimizu, Shinagawa, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
A semiconductor device according to an embodiment includes a silicon carbide layer having a first and second plane, first and second trench extending in first direction, and in the silicon carbide layer, n-type first region, p-type second region between the n-type first region and the first plane and between the first and second trench, p-type fifth region covering bottom of the first trench, p-type sixth region covering bottom of the second trench, n-type seventh region between the fifth region and the second region, n-type eighth region between the sixth and second regions, p-type ninth regions contacting the fifth and second regions, and p-type tenth regions contacting the sixth region and the second region, the ninth and tenth regions repeatedly disposed in the first direction, and a line segment connecting the ninth region and the tenth region is oblique with respect to second direction perpendicular to the first direction.