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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11276758 B1

PDFFull Text
Date of Patent:
Mar. 15, 2022

Filed:

Aug. 27, 2019

Semiconductor device, inverter circuit, driving device, vehicle, and elevator having a reduced on-resistance with a silicon carbide layer

Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Tatsuo Shimizu, Shinagawa, JP;

Toshiyuki Oshima, Bunkyo, JP;

Ryosuke Iijima, Setagaya, JP;

Hisashi Yoshida, Kawasaki, JP;

Shigeya Kimura, Yokohama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Daniel Whalen

Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/51 (2006.01); H01L 29/08 (2006.01); H01L 29/739 (2006.01); H01L 29/80 (2006.01); H01L 29/20 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02178 (2013.01); H01L 21/045 (2013.01); H01L 29/045 (2013.01); H01L 29/086 (2013.01); H01L 29/2003 (2013.01); H01L 29/511 (2013.01); H01L 29/518 (2013.01); H01L 29/7395 (2013.01); H01L 29/7813 (2013.01); H01L 29/802 (2013.01);
Abstract

An embodiment is a semiconductor device includes a silicon carbide layer having a first plane and a second plane facing the first plane; a gate electrode; an aluminum nitride layer located between the silicon carbide layer and the gate electrode, the aluminum nitride layer containing an aluminum nitride crystal; a first insulating layer located between the silicon carbide layer and the aluminum nitride layer; and a second insulating layer located between the aluminum nitride layer and the gate electrode and having a wider band gap than the aluminum nitride layer.

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