Yokohama, Japan

Toshitaka Fukushima

This inventor holds 25 USPTO granted patents, primarily in Semiconductor Devices. Top assignees: Fujitsu Corporation, Tii Industries, Inc.. Active years: 1981-1990.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshitaka Fukushima. Retrieved from https://idiyas.com/inventor/toshitaka-fukushima

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.5

ph-index = 10

Forward Citations = 335(Granted Patents)


Company Filing History:


Years Active: 1981-1990

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Areas of Expertise:
Schottky Barrier Diode
Programmable Memory
Wafer-Scale Integration
Isolation Structures
Fault Detection
Transistor Technology
Dynamic Testing
High-Impedance States
Integrated Circuits
Surge Arrester
Data Storage
Memory Cells
25 patents (USPTO):Explore Patents

Title: Toshitaka Fukushima: A Pioneer in Semiconductor Innovations

Introduction

Toshitaka Fukushima, a prolific inventor based in Yokohama, Japan, has made significant contributions to the field of semiconductor technology with an impressive portfolio of 25 patents. His innovative work has been instrumental in advancing various aspects of logic circuits and memory devices.

Latest Patents

Fukushima's latest inventions illustrate his expertise in semiconductor devices. One notable patent includes a **Schottky barrier diode clamp transistor**, designed specifically for use in output stages of logic circuits. This device features a clamping circuit situated between the collector and base, utilizing a Schottky barrier diode (SBD) to manage collector potential effectively. The innovative clamping mechanism enhances the reliability of logic circuits by integrating series-connected resistances, showcasing Fukushima's ingenuity in semiconductor design.

Another significant invention is a **semiconductor programmable memory device**, which functions as a field-programmable device such as a PROM. This device incorporates memory cells formed from a combination of capacitors and diodes or FETs. The programming process introduces a short circuit within the capacitor's insulation film through electrical breakdown, leading to enhanced stability and reliability. By utilizing ion implantation techniques to oxidize or nitridize the insulation film, the device counters instability issues, further solidifying Fukushima's status as a leading innovator in the field.

Career Highlights

Fukushima has worked with prestigious companies, including **Fujitsu Corporation** and **Tii Industries, Inc.**, where he contributed his expertise to the development of advanced semiconductor technologies. His role in these organizations has allowed him to shape the future of electronics through groundbreaking innovations.

Collaborations

Throughout his career, Fukushima has collaborated with notable individuals in the industry, including Kouji Ueno and Kazumi Koyama. These partnerships have facilitated knowledge sharing and idea exchange, resulting in several noteworthy advancements in semiconductor design and functionality.

Conclusion

Toshitaka Fukushima's accomplishments reflect his dedication and exceptional talent in the semiconductor field. With 25 patents to his name, his inventions have not only advanced technology but also inspired future innovations in semiconductor devices. His work continues to influence the industry, reaffirming the vital role of inventors in shaping the technological landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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