Hebei, China

Tongnian Sun

This inventor holds 10 USPTO granted patents and 4 published patent applications and 1 EPO patent. Top assignee: The 13Th Research Institute of China Electronics Technology Group Corporation. Active years: 2019-2026.

USPTO Granted Patents = 10 

% Patents Active = 100.0

 

Average Co-Inventor Count = 6.8

ph-index = 1


Company Filing History:


Years Active: 2019-2026

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10 patents (USPTO):Explore Patents

Title: Innovative Contributions of Tongnian Sun in Semiconductor Crystal Growth

Introduction

Tongnian Sun, an esteemed inventor based in Hebei, China, has made significant strides in the field of semiconductor crystal growth. With a remarkable portfolio of six patents, his work focuses on improving methods and devices for the production of high-quality single crystals essential for various technological applications.

Latest Patents

Among Tongnian Sun's most recent innovations is the patent for a "Device and method for continuous VGF crystal growth through reverse injection synthesis." This invention addresses the challenges associated with preparing semiconductor crystals by enabling the continuous in situ growth of crystals using a combination of the Vertical Gradient Freezing (VGF) method and reverse injection synthesis. The system comprises a furnace body, crucible, heat preservation system, heating system, temperature control system, and gas pressure regulation system, working together to facilitate efficient crystal growth.

Another notable patent is the "Apparatus for preparing a single crystal comprising a volatilization chamber and a plurality of crystal pieces fixed by combined fixtures located in a solid connection chamber." This apparatus enables the transformation of small-size single crystals into larger ones while eliminating common growth issues such as twinning and polycrystallization. The design includes a hydrocooling furnace and a solid connection chamber, providing a streamlined and simple process for achieving large-size single crystals.

Career Highlights

Tongnian Sun is affiliated with the 13th Research Institute of China Electronics Technology Group Corporation, where he actively contributes to research and development in semiconductor technologies. His work not only enhances the understanding of crystal growth processes but also bolsters advancements in electronic materials critical for modern applications.

Collaborations

Throughout his career, Tongnian Sun has collaborated with other talented individuals, including Niefeng Sun and Shujie Wang. These collaborations have fostered a dynamic environment for innovation, allowing for the exchange of ideas and expertise within the semiconductor research community.

Conclusion

Tongnian Sun's dedication to advancing semiconductor crystal growth technology positions him as a prominent figure in the field of materials science. With his innovative patents and collaborative spirit, he continues to contribute to the future of high-quality semiconductor materials, influencing both industry practices and academic research.

Profile summary based on public USPTO records.
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